![]() Now, if a voltage is applied between the drain and source the current flows freely between the source and drain and the gate voltage controls the electrons in the channel. The positive voltage also attracts electrons from the n+ source and drain regions into the channel. Upon the reach of electrons, the channel is formed. The depletion region is populated by the bound negative charges which are associated with the acceptor atoms. When we apply the positive voltage with repulsive force at the gate terminal then the holes present under the oxide layer are pushed downward into the substrate. The current flow in this type of MOSFET happens because of negatively charged electrons. In this type of Field Effect Transistor, the drain and source are heavily doped n+ region and the substrate or body are of P-type. It is a four-terminal device having the terminals as gate, drain, source, body. The N-Channel MOSFET has an N- channel region located in between the source and drain terminals. Please refer to this link to know more about – P-Channel MOSFET.ĭepletion Mode P Channel P Channel Enhanced Mode N- Channel MOSFET The negative gate voltage also attracts holes from the p+ source and drain region into the channel region. The depletion region populated by the bound positive charges which are associated with the donor atoms. When we apply the negative voltage with repulsive force at the gate terminal, then the electrons present under the oxide layer are pushed downwards into the substrate. The flow of current is in the direction of positively charged holes. The drain and source are heavily doped p+ region and the body or substrate is of n-type. It is a four-terminal device having the terminals as gate, drain, source, and body. The P- channel MOSFET has a P- Channel region located in between the source and drain terminals. Instead of the positive voltage, if we apply a negative voltage, a hole channel will be formed under the oxide layer. Now, if a voltage is applied between the drain and source, the current flows freely between the source and drain and the gate voltage controls the electrons in the channel. ![]() When electrons are reached, a channel is developed. The depletion region populated by the bound negative charges which are associated with the acceptor atoms.
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